Title :
Terahertz radiation from heavy-ion irradiated In0.35Ga0.47As photoconductive antenna at 1.55 μm
Author :
Chimot, N. ; Mangeney, J. ; Joulaud, L. ; Crozat, P. ; Blary, K. ; Lampin, J.F.
Author_Institution :
Inst. d´´Electronique Fondamentale, Universite Paris, Orsay, France
Abstract :
We measured the terahertz (THz) emission from heavy-ion irradiated In0.35Ga0.47As photoconductive (PC) antennas excited at 1550 nm. The In0.35Ga0.47As layer irradiated at 1012 cm-2 shows a carrier lifetime shorter than 200 fs, a steady-state mobility of 490 cm2V-1s-1, and a dark resistivity of 3.1 Ωcm. The spectrum of the electric field radiated from the heavy-ion irradiated In0.35Ga0.47As antenna extends beyond 2 THz. Comparative measurements performed on In0.35Ga0.47As PC antennas irradiated at 1011 cm-2 and 1012 cm-2 demonstrate the impact of the defect center scattering on the photo-excited carrier mobility.
Keywords :
III-V semiconductors; carrier lifetime; carrier mobility; electric fields; electrical resistivity; gallium arsenide; heavy ion-nucleus reactions; indium compounds; photoconductivity; submillimetre wave antennas; 1.55 micron; 1550 nm; 3.1 ohmcm; In0.35Ga0.47As; carrier lifetime; dark resistivity; defect center scattering; electric field; heavy-ion irradiation; photo-excited carrier mobility; photoconductive antenna; steady-state mobility; terahertz radiation; Antenna accessories; Antenna measurements; Charge carrier lifetime; Conductivity; Detectors; Dipole antennas; Frequency; Optical scattering; Photoconductivity; Photonic crystals;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572517
