• DocumentCode
    2970538
  • Title

    Effects of RTA and WSix-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs

  • Author

    Park, Donggun ; Son, Nak-Jin ; Kim, Ji-Young ; Lee, Wonshik

  • fYear
    2000
  • fDate
    2000
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    We report the process effects on the MOSFET reliability and characteristics for the gate stack formation process in DRAM (Dynamic Random Access Memory). A rapid thermal annealing (RTA) process, employed for the reduction of word-line resistance and the improvement of hot-carrier life-time, caused an increase of the gate-induced drain leakage (GIDL) current. WSix gate dependence, Hot-Carrier (HC) and Fowler-Nordheim (FN) stress effects are also studied
  • Keywords
    DRAM chips; MOSFET; carrier lifetime; hot carriers; leakage currents; rapid thermal annealing; semiconductor device metallisation; semiconductor device reliability; tungsten compounds; DRAM; Fowler-Nordheim stress; MOSFET reliability; WSi; WSix polycide gate; gate stack formation; gate-induced drain leakage current; hot carrier lifetime; rapid thermal annealing; word-line resistance; Conductivity; Electrical resistance measurement; Electrodes; Fabrication; Hot carriers; Leakage current; MOSFET circuits; Random access memory; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2000 IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-6392-2
  • Type

    conf

  • DOI
    10.1109/IRWS.2000.911918
  • Filename
    911918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2970538