Title :
LSF technique to analyze intrinsic TDDB failures of gate oxides
Author_Institution :
Sci. Univ. of Tokyo, Japan
Abstract :
The exact least square fit (LSF) technique assuming quadratic dependence on EOX and 1/T is applied to analyze the published experimental TDDB data of MOS gate oxides. The EOX and 1/T dependence is found more complicated than the simple E model suggests. The linear EOX dependence of Eα and the linear 1/T dependence of Gamma is confirmed, and the disagreement with the original papers is discussed. The E model is preferred in the measured EOX and 1/T region, but, by extrapolation, the 1/E dependence may have merit at specific regions
Keywords :
MIS structures; failure analysis; least squares approximations; semiconductor device breakdown; 1/E model; E model; Gamma; MOS structure; TDDB failure; electric field dependence; gate oxide; least square fit; temperature dependence; Data mining; Educational institutions; Equations; Extrapolation; Failure analysis; Least squares methods; Mathematical model; Solid modeling; Temperature dependence; Temperature distribution;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911919
