Title :
Surface roughness effect on gate leakage and C-V characteristics of deep submicron MOSFETs
Author :
Zhang, Jinlong ; Yuan, Jiann S. ; Ma, Yi ; Oates, Anthony S.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
In this work, direct tunneling, series resistance, and surface roughness effects on the capacitance-voltage (C-V) characteristics of ultrathin gate dielectrics in deep submicron MOSFETs are studied in a unified manner. An equivalent circuit model taking all the above mentioned effects into account is proposed. Based on our understanding, it is for the first time that the surface roughness effect on the C-V characteristics has been explored in the electrical engineering perspective
Keywords :
MOSFET; capacitance; equivalent circuits; leakage currents; rough surfaces; semiconductor device models; tunnelling; capacitance-voltage characteristics; deep submicron MOSFET; direct tunneling; equivalent circuit model; gate leakage; oxide reliability; series resistance; surface roughness; ultrathin gate dielectric; Capacitance-voltage characteristics; Dielectrics; Electrical engineering; Equivalent circuits; Gate leakage; MOSFETs; Rough surfaces; Surface resistance; Surface roughness; Tunneling;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911920
