Title :
Hole detrapping effect on gate oxide breakdown under DC and AC stress
Author :
Duan, Xiaodong ; Wu, Wen ; Yuan, J.S.
Author_Institution :
Dept. of Phys., Univ. of Central Florida, Orlando, FL, USA
Abstract :
The closed-form expressions for time dependent dielectric breakdown (TDDB) are derived for both DC and AC stress conditions including the hole detrapping effect. The derivations are based on a physical model proposed by Cheung. The model predictions are compared with the experimental results. The limitation of the unified breakdown model is also discussed
Keywords :
MIS structures; electric breakdown; hole traps; AC stress; DC stress; MOS structure; gate oxide breakdown model; hole detrapping; time dependent dielectric breakdown; Closed-form solution; Computer science; Dielectric breakdown; Electric breakdown; Electron traps; Equations; Physics; Predictive models; Thermal stresses; Tunneling;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911921
