Traveling-wave semiconductor laser amplifiers for optical communications systems

Author

Saitoh, Tadashi ; Mukai, Takaaki

Author_Institution

NTT Basic Res. Lab., Tokyo, Japan

fYear

1990

fDate

2-5 Dec 1990

Firstpage

1274

Abstract

The state of the art and future possibilities for semiconductor laser amplifiers (SLAs) are reviewed. Design criteria for improving SLA characteristics are clarified from the viewpoint of both material gain parameters and amplifier operating conditions. It is shown that essential amplifier characteristics for communications system applications are high saturation power and a small noise figure, which are achieved by traveling-wave semiconductor laser amplifiers (TWAs). Antireflection (AR) coating, angled facet structures, and window facet structures are discussed to reduce facet reflection for the fabrication of TWAs

Keywords

optical communication equipment; optical design techniques; semiconductor junction lasers; amplifier characteristics; amplifier operating conditions; angled facet structures; antireflection coating; communications system applications; design; fabrication; facet reflection; high saturation power; material gain parameters; optical communications systems; semiconductor laser amplifiers; small noise figure; travelling wave amplifiers; window facet structures; High power amplifiers; Laser noise; Noise figure; Optical amplifiers; Optical materials; Optical saturation; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Global Telecommunications Conference, 1990, and Exhibition. 'Communications: Connecting the Future', GLOBECOM '90., IEEE

Conference_Location

San Diego, CA

Print_ISBN

0-87942-632-2

Type

conf

DOI

10.1109/GLOCOM.1990.116700

Filename

116700