Title :
An improved substrate current model for deep submicron CMOS transistors
Author :
Li, Wei ; Yuan, J.S. ; Chetlur, Sundar ; Zhou, Jonathan ; Oates, A.S.
Author_Institution :
Sch. of Electr. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
A simple and accurate substrate current model was developed by modifying the model of ionization characteristic length and tested for both n-channel and p-channel devices against the measurement data. It shows a better match by comparing with other models reported in the literature. The model has been used to simulate the transient substrate current in circuit operating conditions to show its ability to predict the device and circuit lifetime
Keywords :
MOSFET; semiconductor device measurement; semiconductor device models; semiconductor device reliability; transient analysis; circuit lifetime; circuit operating conditions; deep submicron CMOS transistors; device lifetime; ionization characteristic length; measurement data; p-channel devices; substrate current model; transient substrate current; Chip scale packaging; Computer science; Equations; Hot carriers; Impact ionization; Laboratories; MOS devices; Semiconductor device modeling; Testing; Threshold voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911924
