Title :
Off-state-degradation of 170 nm and 140 nm buried LDD pMOSFETs with different HALO implants
Author :
Holzhauser, S. ; Narr, A.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
In this work we present an experimental analysis of the transistor parameter degradation for pMOS devices operating in the off-state-mode. The parameter degradation is investigated for devices with different HALO implants. The reason for the parameter degradation and the location of the damage which causes the parameter shift of the transistor is discussed. Finally the influence of the HALO implant on the device lifetime is presented
Keywords :
MOSFET; buried layers; ion implantation; leakage currents; 140 nm; 170 nm; HALO implantation; buried LDD pMOSFET; device lifetime; leakage current; off-state mode; transistor parameter degradation; Circuits; Degradation; Diodes; Implants; Leakage current; MOS devices; MOSFETs; Microelectronics; Stress; Threshold voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911928
