Title :
The effect of hydrogen-radical annealing for SiO2 passivation
Author :
Nagayoshi, H. ; Yamaguchi, M. ; Yamamoto, Y. ; Ikeda, Makoto ; Saitoh, T. ; Kamisako, K. ; Uematsu, T.
Author_Institution :
Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan
Abstract :
The reduction of recombination velocity is important in obtaining high-efficiency solar cells, and SiO2 passivation and hydrogen post-annealing are therefore widely used as surface passivation techniques. This investigation of hydrogen-radical post-annealing using the microwave hydrogen afterglow method shows that this procedure increases the effective lifetime of silicon wafers with SiO2 passivation layers with a very short annealing time to a degree greater than does 3% H2 forming gas annealing
Keywords :
annealing; electron-hole recombination; elemental semiconductors; high-frequency discharges; passivation; semiconductor materials; silicon; silicon compounds; solar cells; H2; Si; SiO2; SiO2 passivation; high-efficiency solar cells; hydrogen-radical annealing; microwave hydrogen afterglow method; recombination velocity reduction; silicon wafer lifetime improvement; surface passivation; Annealing; Atomic layer deposition; Atomic measurements; Etching; Hydrogen; Microwave technology; Microwave theory and techniques; Passivation; Photovoltaic cells; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520500
