Title :
Electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems including Joule heating effect
Author :
Wu, W. ; Kang, S.H. ; Yuan, J.S. ; Oates, A.S.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
A thermal model for determining the interconnect temperature of different interconnect systems is developed. The analytical model predictions are compared with the two-dimensional numerical simulation results using the finite element analysis. Good agreement between the analytical model and the finite element analysis is obtained. At high current densities, the temperature of the Cu/low-K interconnect is much higher than that of the Cu/SiO2 and Al/SiO2 interconnects due to the lower thermal conductivity of the low-K dielectric
Keywords :
aluminium; copper; electromigration; finite element analysis; integrated circuit interconnections; integrated circuit modelling; silicon compounds; Al-SiO2; Al/SiO2 interconnect; Cu; Cu-SiO2; Cu/SiO2 interconnect; Cu/low-K dielectric interconnect; Joule heating; current density; electromigration; finite element analysis; thermal conductivity; thermal model; two-dimensional numerical simulation; Analytical models; Copper; Current density; Electromigration; Equations; Finite element methods; Integrated circuit interconnections; Metal-insulator structures; Temperature dependence; Thermal conductivity;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911930
