C-band GaN HEMT Power Amplifier with 220W Output Power

In this paper, GaN HEMT high power amplifiers operating at C-band are presented. Improvement of device performance and reduction of thermal resistance with larger gate pitch enabled 1.4 times power density compared with the previous work [1]-[2]. 167 W output power was extracted from a single chip GaN HEMT with 7 W/mm power density. 2-chip amplifier have recorded 220 W output power at C-band, which is the highest output power ever reported for GaN HEMT amplifiers at C-band and higher bands.