Low-stress encapsulation resin for VLSI

Author

Nishioka, T. ; Suzuki, H. ; Adachi, J. ; Taki, H. ; Yamanaka, K. ; Shimizu, M. ; Iko, K.

Author_Institution

Nitto Denko Corp., Mie, Japan

fYear

1989

fDate

22-24 May 1989

Firstpage

881

Lastpage

884

Abstract

A low-stress molding compound for VLSI consisting of a soft-elastomer-domain/epoxy-resin matrix structure is discussed. Methods for minimizing the domain size, physical properties of the materials, and evaluation of stress level are reported. A domain size of 0.1 μm is found to result in optimum solubility of the elastomer and low-stress encapsulant. It is confirmed that the coefficient of thermal expansion and Young´s modulus are acceptable parameters for estimating the stress level

Keywords

VLSI; Young´s modulus; encapsulation; integrated circuit technology; packaging; passivation; polymer blends; solubility; thermal expansion; thermal stresses; IC packaging; VLSI; Young´s modulus; domain size; encapsulation resin; epoxy-resin matrix structure; low-stress molding compound; optimum solubility; physical properties; polymer mixture; soft-elastomer-domain; thermal expansion coefficient; Cities and towns; Curing; Encapsulation; Epoxy resins; Mechanical variables measurement; Size measurement; Stress measurement; Thermal expansion; Thermal stresses; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components Conference, 1989. Proceedings., 39th

Conference_Location

Houston, TX

Type

conf

DOI

10.1109/ECC.1989.77849

Filename

77849