• DocumentCode
    2970910
  • Title

    Additive interconnect fabrication by picosecond Laser Induced Forward Transfer

  • Author

    Oosterhuis, G. ; in´t Veld, B.H. ; Ebberink, G. ; del Cerro, Daniël Arnaldo ; Van den Eijnden, Edwin ; Chall, Peter ; van der Zon, Ben

  • Author_Institution
    TNO Sci. & Ind., Eindhoven, Netherlands
  • fYear
    2010
  • fDate
    16-18 Nov. 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Laser Induced Forward Transfer (LIFT) is a single step, dry deposition process which shows great potential for interconnect fabrication. TNO, in cooperation with ALSI and University of Twente have studied the feature size and resistivity of copper structures deposited using picosecond (ps) LIFT. Small droplets are generated in response to single pulses at high repetition rate (400kHz). It has been shown that with a relatively simple setup, very promising features could be realized. These first results justify further development of the process towards industrial application.
  • Keywords
    copper; electrical resistivity; integrated circuit interconnections; laser materials processing; Cu; copper structures; dry deposition process; feature size; frequency 400 kHz; interconnect fabrication; picosecond LIFT; picosecond laser induced forward transfer; resistivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2010 IEEE International
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4577-0526-7
  • Type

    conf

  • DOI
    10.1109/3DIC.2010.5751481
  • Filename
    5751481