DocumentCode
2970910
Title
Additive interconnect fabrication by picosecond Laser Induced Forward Transfer
Author
Oosterhuis, G. ; in´t Veld, B.H. ; Ebberink, G. ; del Cerro, Daniël Arnaldo ; Van den Eijnden, Edwin ; Chall, Peter ; van der Zon, Ben
Author_Institution
TNO Sci. & Ind., Eindhoven, Netherlands
fYear
2010
fDate
16-18 Nov. 2010
Firstpage
1
Lastpage
5
Abstract
Laser Induced Forward Transfer (LIFT) is a single step, dry deposition process which shows great potential for interconnect fabrication. TNO, in cooperation with ALSI and University of Twente have studied the feature size and resistivity of copper structures deposited using picosecond (ps) LIFT. Small droplets are generated in response to single pulses at high repetition rate (400kHz). It has been shown that with a relatively simple setup, very promising features could be realized. These first results justify further development of the process towards industrial application.
Keywords
copper; electrical resistivity; integrated circuit interconnections; laser materials processing; Cu; copper structures; dry deposition process; feature size; frequency 400 kHz; interconnect fabrication; picosecond LIFT; picosecond laser induced forward transfer; resistivity;
fLanguage
English
Publisher
ieee
Conference_Titel
3D Systems Integration Conference (3DIC), 2010 IEEE International
Conference_Location
Munich
Print_ISBN
978-1-4577-0526-7
Type
conf
DOI
10.1109/3DIC.2010.5751481
Filename
5751481
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