Title :
Passivation properties of a-Si1-xNx:H/SiO2 double-layer structures
Author :
Yamaguchi, M. ; Nagayoshi, H. ; Yamamoto, Y. ; Ikeda, M. ; Uematsu, T. ; Saitoh, T. ; Kamisako, K.
Author_Institution :
Tokyo Univ. of Agric. & Technol., Japan
Abstract :
Investigation of the improvement of effective lifetime (γ) induced by using a-Si1-xNX:H/SiO2 double-layer passivation structures showed that the T values obtained were higher than those obtained when using a-Si1-xNx :H or SiO2 monolayer passivation. Furthermore, the γ of a-Si1-xNx:H/SiO2 structures was greatly increased with increase of the bias light intensity. This effect was almost independent of the (x/1-x) ratio of the a-Si1-x NX:H layer, and it is therefore possible to control the refractive index of a-Si1-xNx:H layers independently while keeping good passivation effect
Keywords :
carrier lifetime; electron-hole recombination; hydrogen; passivation; refractive index; semiconductor-insulator boundaries; silicon; silicon compounds; surface recombination; Si; SiN:H-SiO2; a-Si1-xNx:H/SiO2 double-layer structures; bias light intensity; effective lifetime; passivation properties; refractive index; solar cell material; surface recombination; Annealing; Atomic layer deposition; Hydrogen; Independent component analysis; MONOS devices; Oxidation; Passivation; Semiconductor films; Silicon compounds;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520501
