• DocumentCode
    2970969
  • Title

    Passivation properties of a-Si1-xNx:H/SiO2 double-layer structures

  • Author

    Yamaguchi, M. ; Nagayoshi, H. ; Yamamoto, Y. ; Ikeda, M. ; Uematsu, T. ; Saitoh, T. ; Kamisako, K.

  • Author_Institution
    Tokyo Univ. of Agric. & Technol., Japan
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Dec 1994
  • Firstpage
    1515
  • Abstract
    Investigation of the improvement of effective lifetime (γ) induced by using a-Si1-xNX:H/SiO2 double-layer passivation structures showed that the T values obtained were higher than those obtained when using a-Si1-xNx :H or SiO2 monolayer passivation. Furthermore, the γ of a-Si1-xNx:H/SiO2 structures was greatly increased with increase of the bias light intensity. This effect was almost independent of the (x/1-x) ratio of the a-Si1-x NX:H layer, and it is therefore possible to control the refractive index of a-Si1-xNx:H layers independently while keeping good passivation effect
  • Keywords
    carrier lifetime; electron-hole recombination; hydrogen; passivation; refractive index; semiconductor-insulator boundaries; silicon; silicon compounds; surface recombination; Si; SiN:H-SiO2; a-Si1-xNx:H/SiO2 double-layer structures; bias light intensity; effective lifetime; passivation properties; refractive index; solar cell material; surface recombination; Annealing; Atomic layer deposition; Hydrogen; Independent component analysis; MONOS devices; Oxidation; Passivation; Semiconductor films; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    0-7803-1460-3
  • Type

    conf

  • DOI
    10.1109/WCPEC.1994.520501
  • Filename
    520501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2970969