Raman scattering in ZnMnO prepared by ion implantation

Author

Zhong, Hongmei ; Wang, Jinbin ; Li, Zhifeng ; Chen, Xiaoshuang ; Xu, Wenlan ; Lu, Wei ; Shen, S.C.

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., China

Volume

2

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

343

Abstract

ZnMnO has been successfully prepared by high-dose Mn implantation into ZnO crystal. The influence of implantation and annealing on ZnMnO Raman spectra has been investigated. The E₂ mode weakens, broadens and red-shifts after the implantation, while the A₁(LO) mode intensifies, broadens and red-shifts. After thermal annealing a new mode at 528 cm^-1 shows up. With the recursion method calculation this new mode is attributed to the softening of Zn-O vibration caused by Mn incorporation.

Keywords

II-VI semiconductors; Raman spectra; annealing; ion implantation; manganese; materials preparation; semiconductor doping; soft modes; zinc compounds; Raman scattering; Raman spectra; ZnMnO; ZnO; high-dose ion implantation; mode softening; recursion method calculation; thermal annealing; Annealing; Impurities; Laboratories; Magnetic materials; Phonons; Physics; Raman scattering; Softening; Spectroscopy; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572553

Filename

1572553