A Low Noise Chipset for Passive Millimeter Wave Imaging

Author

Moyer, H.P. ; Lynch, J.J. ; Schulman, J.N. ; Bowen, R.L. ; Schaffner, J.H. ; Kurdoghlian, A.K. ; Hsu, T.Y.

Author_Institution

HRL Labs. LLC, Malibu

fYear

2007

fDate

3-8 June 2007

Firstpage

1363

Lastpage

1366

Abstract

Technology for passive millimeter wave imaging has been maturing over the last 4-5 years. One key piece of technology that will allow for large scale production is a low cost front-end receiver. We have developed a two chip solution that addresses this need at W-band. A four stage InP LNA with a pre-matched Sb-heterostructure diode provides a low noise equivalent temperature difference (NETD). Our fabricated chipset provides sensitivities of 10,000 mV/muW over a 22 GHz noise equivalent bandwidth and an NETD of 0.8 K. To our knowledge, this is the best performance to date of a two chip solution for a passive millimeter wave radiometer.

Keywords

MMIC amplifiers; indium compounds; low noise amplifiers; millimetre wave diodes; millimetre wave imaging; millimetre wave receivers; InP; front-end receiver; low noise chipset; low noise equivalent temperature difference; passive millimeter wave imaging; passive millimeter wave radiometer; Bandwidth; Cameras; Costs; Detectors; Indium phosphide; Millimeter wave technology; Radiometry; Schottky diodes; Security; Spatial resolution; Millimeter wave detectors; imaging cameras; millimeter wave diodes; millimeter wave imaging; millimeter wave radiometry; tunnel diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380466

Filename

4264088