Structural and electrical studies of RF magnetron sputtered ZnO films under different RF powered conditions

Author

Ahmad, S. ; Sin, N. D Md ; Berhan, M.N. ; Rusop, M.

Author_Institution

Fac. of Mech. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2012

fDate

24-27 June 2012

Firstpage

1105

Lastpage

1109

Abstract

We report the structural and electrical studies of ZnO thin films under different RF power (50 to 300 Watt in steps of 50 watt). The ZnO thin films were deposited on glass substrate by radio frequency (RF) magnetron sputtering method in an argon atmosphere. The surface morphology, crystallinity and conductivity were analyzed by FESEM, AFM, XRD and current voltage (I-V) probe measurement system. The results showed the highest conductivity value at 300 Watt RF power (12.479 Sm^-1). The higher conductivity material is preferred due to their low driving power when used as a gas sensor.

Keywords

II-VI semiconductors; X-ray diffraction; atomic force microscopy; electrical conductivity; gas sensors; scanning electron microscopy; semiconductor growth; semiconductor thin films; sputter deposition; surface morphology; wide band gap semiconductors; zinc compounds; AFM; FESEM; I-V probe measurement system; RF magnetron sputtered films; RF powered conditions; XRD; ZnO; argon atmosphere; current voltage probe measurement system; gas sensor; glass substrate; high conductivity material; radio frequency magnetron sputtering method; surface morphology; thin films; Conductivity; Magnetic films; Radio frequency; Sputtering; Surface treatment; Zinc oxide; RF power; ZnO; electrical properties; magnetron sputtering; structural properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4673-1311-7

Type

conf

DOI

10.1109/SHUSER.2012.6268789

Filename

6268789