DocumentCode
2971533
Title
Modeling and diagnostics of a microwave plasma resonant cavity reactor used for diamond film deposition
Author
Grotjohn, Timothy A. ; Welter, Marcio ; Mossbrucker, J.
Author_Institution
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fYear
1996
fDate
3-5 June 1996
Firstpage
137
Lastpage
138
Abstract
Summary form only given. The use of microwave discharges for the plasma-assisted chemical vapor deposition (CVD) of films has proven to be a successful technique for several applications including the deposition of diamond films. The overall goal of this study is the improvement of microwave plasma deposition machines for deposition applications by a combined approach of experimental diagnostic measurements and numerical model simulations. The objective of this study is to measure and model a microwave plasma processing machine. The specific machine studied is a 13 cm diameter discharge microwave plasma reactor used for diamond CVD deposition. The key processes studied include the electromagnetic excitation of the plasma and the gas phase chemistry which is dominated by hydrogen. An electromagnetic field simulation model is used to solve for the microwave excitation fields in the plasma reactor. The electromagnetic fields are modeled in two dimensions using a finite-difference, time-domain method to solve Maxwell´s equations. The plasma description is a fluid model solution of the plasma which includes a model of hydrogen/methane plasma dynamics. The gas phase chemistry of the hydrogen/ methane mixture is also modeled in this effort.
Keywords
high-frequency discharges; 1 to 5 kW; 2.45 GHz; 20 to 130 torr; C; H/sub 2//methane plasma dynamics; Maxwell equations; diagnostics; diamond film deposition; electromagnetic field simulation model; finite-difference time-domain method; fluid model solution; gas phase chemistry; microwave discharges; microwave plasma deposition machines; microwave plasma processing machine; microwave plasma resonant cavity reactor; modeling; numerical model simulations; plasma electromagnetic excitation; plasma-assisted chemical vapor deposition; Electromagnetic measurements; Hydrogen; Microwave measurements; Plasma applications; Plasma chemistry; Plasma diagnostics; Plasma materials processing; Plasma measurements; Plasma simulation; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
Conference_Location
Boston, MA, USA
ISSN
0730-9244
Print_ISBN
0-7803-3322-5
Type
conf
DOI
10.1109/PLASMA.1996.550639
Filename
550639
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