Title :
Extraction of circuit models for substrate cross-talk
Author :
Smedes, T. ; Van Der Meijs, N.P. ; van Genderen, A.J.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
An increasingly urgent topic for the realization of densely packed (mixed signal) integrated circuits is prevention of cross-talk via the substrate. The paper proposes a boundary element method (BEM) for calculating an admittance matrix for the substrate in order to analyze the parasitic coupling during layout verification. In contrast to standard BE methods, we propose a Green´s function which is specific to the domain and the problem. This allows minimal discretization and a direct extraction of circuit models for the cross-talk. The extraction can be combined with an efficient model reduction technique to obtain more simple, yet accurate models for the cross-talk. The complete extraction process has a linear time complexity and a constant memory usage. The method is fully implemented and integrated in an existing layout-to-circuit extractor.
Keywords :
Green´s function methods; boundary-elements methods; circuit layout CAD; computational complexity; crosstalk; electric admittance; integrated circuit layout; integrated circuit modelling; mixed analogue-digital integrated circuits; admittance matrix; boundary element method; circuit model extraction; constant memory usage; densely packed integrated circuits; layout verification; layout-to-circuit extractor; linear time complexity; minimal discretization; mixed signal integrated circuits; model reduction technique; parasitic coupling; substrate cross-talk prevention; Analytical models; Boundary element methods; Circuit simulation; Coupling circuits; Design automation; Integrated circuit interconnections; Integrated circuit technology; Mixed analog digital integrated circuits; Numerical analysis; Parasitic capacitance;
Conference_Titel :
Computer-Aided Design, 1995. ICCAD-95. Digest of Technical Papers., 1995 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-8186-8200-0
DOI :
10.1109/ICCAD.1995.480013