DocumentCode
2972382
Title
Photosensitive polyimide for IC devices
Author
Kojima, Mitsumasa ; Sekine, Hiroyoshi ; Suzuki, Hiroshi ; Satou, Hidetaka ; Makino, Daisuke ; Kataoka, Fumio ; Tanaka, Jun ; Shouji, Fusaji
Author_Institution
Hitachi Chem. Co. Ltd., Ibaraki, Japan
fYear
1989
fDate
22-24 May 1989
Firstpage
920
Lastpage
924
Abstract
Photosensitive polyimide has potential applications for interlayer insulation, alpha-ray shielding, and buffer coating of IC and LSI devices because it offers reduction in processing time. There are two main methods used to photosensitize polyimide. One is based on ion bonding and the other on covalent bonding between polyamic acid and photosensitive groups. The sensitivity, resolution, and mechanical properties such as tensile strength, elongation, and adhesion strength of the photosensitive polyimides have been investigated. The studies indicate that the covalent-bonding type is better than the ion-bonding type in terms of optical properties; the physical properties of the ion-bonding type, however, are much better. In terms of the physical properties conventional nonphotosensitive polyimides still have superior properties compared to photosensitive polyimides
Keywords
adhesion; elongation; integrated circuit technology; optical properties of substances; polymer films; sensitivity; tensile strength; IC devices; LSI devices; adhesion strength; alpha-ray shielding; buffer coating; covalent bonding; elongation; interlayer insulation; ion bonding; mechanical properties; optical properties; photosensitive groups; photosensitive polyimides; polyamic acid; polymer films; resolution; sensitivity; tensile strength; Adhesives; Application specific integrated circuits; Bonding; Coatings; Insulation; Large scale integration; Mechanical factors; Optical buffering; Optical sensors; Polyimides;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location
Houston, TX
Type
conf
DOI
10.1109/ECC.1989.77857
Filename
77857
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