Title :
Opportunities in pulsed laser deposition with the Thomas Jefferson National Accelerator Facility Free Electron Laser
Author_Institution :
Dept. of Phys., Coll. of William & Mary, Williamsburg, VA, USA
Abstract :
The Thomas Jefferson National Accelerator Facility Free Electron Laser (TJNAF-FEL) provides a unique combination of laser parameters: femtosecond pulses, high average power, wavelength tunability and very high repetition rate. This work highlights the advantages of using sub-picosecond pulses at very high repetition rate for pulsed laser ablation and deposition, through analysis of plasma spectra, time-resolved ion and electron emission and morphology of the ablated targets. It is found that the femtosecond pulses produce ablation with little melting and that the high repetition rate leads to high deposition rates as well as laser-plume interactions not seen with lower repetition rate systems.
Keywords :
free electron lasers; high-speed optical techniques; laser ablation; pulsed laser deposition; time resolved spectra; Thomas Jefferson National Accelerator Facility Free Electron Laser; femtosecond pulses; high average power laser; laser parameters; laser-plume interactions; morphology; plasma spectra analysis; pulsed laser ablation and; pulsed laser deposition; sub-picosecond pulses; time-resolved electron emission; time-resolved ion emission; very high repetition rate laser; wavelength tunability; Electron accelerators; Electron emission; Free electron lasers; Laser ablation; Morphology; Optical pulses; Plasma accelerators; Plasma waves; Power lasers; Pulsed laser deposition;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572625