DocumentCode :
2972813
Title :
The electrical characteristics of nanostructured Copper (I) Iodide (CuI) thin films sprayed at different substrate temperatures
Author :
Amalina, M.N. ; Fahmy, A.F. ; Rasheid, N.A. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear :
2012
fDate :
24-27 June 2012
Firstpage :
267
Lastpage :
271
Abstract :
Mister atomizer technique or so called spray pyrolysis has been applied to deposit CuI thin films on amorphous substrate. The effects of substrate temperature (RT- 200°C) on their electrical and optical properties were studied. The physical characteristics of sprayed CuI were determined by field emission scanning electron microscopy (FESEM), current voltage (I-V) measurement and UV-VIS-NIR spectrophotometer. The nanoparticle of CuI was observed at different deposition condition. The effect of substrates temperature on thickness and resistivity proved that both decreases as the substrate temperature increased. This was caused by the increase of carrier concentration at higher substrate temperature. The transmittance and absorption coefficient was measured and then the energy gap was determined which shows the direct transition of n=2. The optimum band gap observed here is 2.75 eV at 150°C of substrate temperature.
Keywords :
absorption coefficients; carrier density; copper compounds; electrical resistivity; energy gap; field emission electron microscopy; infrared spectra; nanofabrication; nanoparticles; pyrolysis; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; spray coating techniques; ultraviolet spectra; visible spectra; CuI; FESEM; UV-VIS-NIR spectra; absorption coefficient; amorphous substrate temperatures; carrier concentration; current voltage measurement; electrical properties; electrical resistivity; energy gap; field emission scanning electron microscopy; mister atomizer method; nanoparticles; nanostructured copper iodide thin films; optical properties; optimum band gap; p-type semiconductor material; physical properties; spray pyrolysis; temperature 150 degC; temperature 200 degC; transmittance coefficient; Conductivity; Optical films; Photonic band gap; Substrates; Temperature; Temperature measurement; Copper (I) Iodide; Electrical Properties; FESEM; Mister Atomizer; Optical Properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-1311-7
Type :
conf
DOI :
10.1109/SHUSER.2012.6268860
Filename :
6268860
Link To Document :
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