Application of statistical experimental design to the development of a one micron CMOS process

Author

Gioia, Samuel ; Miller, Gayle ; Daughton, William

Author_Institution

NCR Microelectron., Colorado Springs, CO, USA

fYear

1989

fDate

22-26 May 1989

Firstpage

1516

Abstract

The concepts of statistical experimental design have been applied to the development of a 1-μm CMOS process for the manufacturing of integrated circuits with optimized performance, while maintaining sufficient margin for both manufacturability and reliability as design goals. The application of these concepts, along with the use of an expert system (RS/Discover) as the basis for selection, design, and analysis of each experiment, is discussed. Examples are presented of the characterization of short-channel MOSFETs developed using the RS/Discover system as the basis for experimental design. Examples of parametric targeting, process optimization, and sensitivity analysis are given

Keywords

CMOS integrated circuits; circuit CAD; expert systems; integrated circuit manufacture; statistical analysis; 1 micron; CMOS process; RS/Discover system; expert system; integrated circuit manufacture; parametric targeting; process optimization; reliability; sensitivity analysis; short-channel MOSFETs; statistical experimental design; CMOS integrated circuits; CMOS process; Design for experiments; Design optimization; Expert systems; Integrated circuit manufacture; Integrated circuit reliability; MOSFETs; Maintenance; Manufacturing processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, 1989. NAECON 1989., Proceedings of the IEEE 1989 National

Conference_Location

Dayton, OH

Type

conf

DOI

10.1109/NAECON.1989.40416

Filename

40416