Title :
Electrical, dielectric and structural properties of MgO thin films deposited on single layer ZnO using chemical solution method
Author :
Habibah, Z. ; Syafawati, N. ; Ismail, L.N. ; Bakar, R.A. ; Mamat, M.H. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer films. Denser films and small particles are produced as the annealing temperature increase from 400°C to 500°C with 25°C interval.
Keywords :
II-VI semiconductors; annealing; electrochemical impedance spectroscopy; field emission electron microscopy; insulating thin films; liquid phase deposition; magnesium compounds; multilayers; permittivity; scanning electron microscopy; semiconductor thin films; semiconductor-insulator boundaries; wide band gap semiconductors; zinc compounds; FESEM; I-V measurement; ZnO-MgO; annealing temperature; chemical solution method; dielectric constant; dielectric properties; electrical properties; field emission scanning electron microscopy; impedance spectroscopy analysis; multilayer; simple chemical deposition technique; single layer ZnO surface; structural properties; temperature 400 degC to 500 degC; thin films; Annealing; Conductivity; Dielectrics; Films; Nonhomogeneous media; Surface morphology; Zinc oxide; ZnO/MgO; annealing; dielectric properties; multilayer films; nanostructured;
Conference_Titel :
Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-1311-7
DOI :
10.1109/SHUSER.2012.6268883
