Title :
Field emission from diamond and other wide-bandgap materials
Author :
Miskovsky, N.M. ; Cutler, P.H. ; Lerner, P. ; Chung, M.S.
Author_Institution :
Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Summary form only given.
Keywords :
diamond; AlN; C; CVD diamond films; GaN; H-terminated (111) surface; I-V characteristics; defect bands; diamond; diamond coated tips; electron affinity; electron field emission; energy distributions; field emission; field emission displays; high frequency applications; transmission probabilities; vacuum microelectronics; wide-bandgap materials; Electron emission; Flat panel displays; Frequency; Microelectronics; Narrowband; Physics; Predictive models; Semiconductor films; Semiconductor materials; Tunneling;
Conference_Titel :
Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3322-5
DOI :
10.1109/PLASMA.1996.550648