Title :
Optimization of RF performance of MIM Damascene Capacitors in Backend of Line
Author :
Piquet, J. ; Bermond, C. ; Thomas, M. ; Farcy, A. ; Lacrevaz, T. ; Vo, T.T. ; Torres, J. ; Fléchet, B.
Author_Institution :
Univ. de Savoie, Le Bourget
Abstract :
High frequency characterizations and simulations of advanced metal-insulator-metal (MIM) capacitors in Cu/low-k backend interconnection process are presented. First, we focus on the impact of silicon substrate and design of MIM capacitors on high frequency performance. Numerical results obtained by a 3D electromagnetic modeling are validated by comparison to experimental results. Second, we show the possibility to increase HF electrical performance of MIM capacitor with optimized design and integration of new medium or high-k materials.
Keywords :
MIM devices; capacitors; copper; radiofrequency integrated circuits; silicon; 3D electromagnetic modeling; Cu/low-k backend interconnection process; MIM damascene capacitors; RF performance optimization; high frequency characterizations; metal-insulator-metal capacitors; radiofrequency analog integrated circuits; silicon substrate; Capacitance; Copper; Dielectric substrates; Electrodes; High K dielectric materials; Integrated circuit interconnections; MIM capacitors; Q factor; Radio frequency; Silicon; MIM damascene capacitor; cut-off frequency; high frequency measurement; medium-k dielectric; quality factor;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380070
