DocumentCode :
2973483
Title :
TH4A: Low Noise Devices, Amplifiers and Receivers
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
1773
Lastpage :
1773
Keywords :
Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Low-noise amplifiers; Noise measurement; Predictive models; Semiconductor device modeling; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI, USA
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380073
Filename :
4264198
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2973483
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