DocumentCode :
2973619
Title :
High-Power High-Reliability Sub-Microsecond RF MEMS Switched Capacitors
Author :
Lakshminarayanan, Balaji ; Rebeiz, Gabriel
Author_Institution :
California Univ., San Diego
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
1801
Lastpage :
1804
Abstract :
We have developed a miniature RF MEMS switched capacitor with a capacitance ratio of 5.2 (Cu=10 fF, Cd=52 fF) and an actuation voltage of 30 V. The device is suitable for operation in the 20-70 GHz frequency range, and can be easily arrayed in parallel or in multi-bit designs for lower frequency of operation (10 GHz or lower). The switched capacitor has been tested to 1 Billion cycles at 10 GHz under 1 W of RF power (hot switching) and a unipolar actuation voltage of 30 V with no failure and no change in the S-parameters. The measured switching time is 0.8 mus. To our knowledge, this is the fastest high-power RF MEMS switched-capacitor to-date.
Keywords :
S-parameters; microswitches; switched capacitor networks; RF MEMS switched capacitor; S-parameters; actuation voltage; capacitance ratio; frequency 10 GHz; frequency 20 GHz to 70 GHz; high-power high-reliability sub-microsecond switched capacitors; power 1 W; time 0.8 mus; voltage 30 V; Bridge circuits; Capacitance; Capacitors; Contacts; Dielectrics; Electrodes; Frequency; Radiofrequency microelectromechanical systems; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380098
Filename :
4264206
Link To Document :
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