DocumentCode :
2973642
Title :
High-Cycle Life Testing of RF MEMS Switches
Author :
Goldsmith, C.L. ; Forehand, D.I. ; Peng, Z. ; Hwang, J. C M ; Ebel, John L.
Author_Institution :
MEMtronics Corp., Plano
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
1805
Lastpage :
1808
Abstract :
RF MEMS capacitive switches capable of order-of-magnitude impedance changes have demonstrated operating lifetimes exceeding 100 billion switching cycles without failure. In situ monitoring of switch characteristics demonstrates no significant degradation in performance and quantifies the charging properties of the switch silicon dioxide film. This demonstration leads credence to the mechanical robustness of RF MEMS switches.
Keywords :
life testing; microswitches; reliability; RF MEMS capacitive switches; high-cycle life testing; silicon dioxide film; situ monitoring; Air gaps; Biomembranes; Dielectrics and electrical insulation; Life testing; Micromechanical devices; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Silicon compounds; Switches; MEMS switches; RF MEMS; dielectric charging; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380099
Filename :
4264207
Link To Document :
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