Title :
pH sensing from frequency response of SGFET
Author :
Kherrat, A. ; Le Bihan, F. ; Jacques, Emmanuel ; Thomas, Martyn ; De Sagazan, Olivier ; Crand, S. ; Mohammed-Brahim, T. ; Razan, F.
Author_Institution :
IETR, Univ. of Rennes I, Rennes, France
Abstract :
This paper presents suspended gate field effect transistors (SGFET) used as highly sensitive pH sensors. The devices are there characterized in dynamic mode. The gain, measured versus frequency, is studied for different pH values and shows a resonance frequency depending on the pH value. These results, obtained with different geometries of SGFET, give an opportunity to develop new microsystems, CMOS compatible, highly sensitive to pH.
Keywords :
CMOS integrated circuits; chemical sensors; field effect transistors; pH measurement; CMOS compatible; SGFET; frequency response; geometries; microsystems; pH sensing; suspended gate field effect transistors; FETs; Logic gates; Resonant frequency; Sensitivity; Sensor phenomena and characterization;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6127353
