Title :
Reverse pillar and maskless contact-two novel recessed metal schemes and their comparisons to conventional VLSI metallization schemes
Author :
Yeh, J.L. ; Hills, G.W. ; Cochran, W.T.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
Two novel metallization schemes, reverse pillar and maskless contact, based on the recessed metal approach, are discussed. The reverse-pillar process offers a self-aligned headless contact for optimum layout. The maskless contact scheme removes the need for a contact lithographic step. The schemes are compared to the conventional metallization schemes. Both the advantages and disadvantage of the schemes are discussed. Both schemes offer the advantages of planarization and easy integration into standard multilevel metal approaches.<>
Keywords :
VLSI; integrated circuit technology; metallisation; VLSI metallization schemes; maskless contact; multilevel metal approaches; optimum layout; planarization; recessed metal schemes; reverse pillar; self-aligned headless contact; Dielectrics; Etching; Filling; Lithography; Metallization; Planarization; Resists; Smoothing methods; Surfaces; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14180
