Title :
InP HBT digital ICs and MMICs in the 140-220 GHz band
Author :
Rodwell, Mark ; Griffith, Z. ; Paidi, V. ; Parthasarathy, N. ; Sheldon, C. ; Singisetti, U. ; Urteaga, M. ; Pierson, R. ; Rowell, P. ; Brar, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Well-balanced InP HBTs now have ∼450 GHz cutoff frequencies and ∼4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) and 175 GHz amplifiers have been demonstrated. We discuss device requirements (scaling laws and scaling limits) for realizing transistors and both digital and analog/RF circuits at sub-mm-wave frequencies; the most critical limitations are metal/semiconductor contact resistivities and dissipated power densities. Given present contact performance and thermal design, 200 GHz digital technologies and 300 GHz power amplifiers are now feasible and will soon be realized.
Keywords :
III-V semiconductors; MMIC; analogue integrated circuits; bipolar digital integrated circuits; heterojunction bipolar transistors; indium compounds; millimetre wave integrated circuits; millimetre wave power amplifiers; submillimetre wave integrated circuits; 140 to 220 GHz; HBT digital IC; InP; MMIC circuit; RF circuits; analog circuits; digital circuits; dissipated power density; metal-semiconductor contact resistivity; power amplifiers; static dividers; sub-mm-wave frequency; thermal design; Conductivity; Cutoff frequency; Digital circuits; Electric breakdown; Heterojunction bipolar transistors; Indium phosphide; MMICs; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572694
