InP HBT digital ICs and MMICs in the 140-220 GHz band

Author

Rodwell, Mark ; Griffith, Z. ; Paidi, V. ; Parthasarathy, N. ; Sheldon, C. ; Singisetti, U. ; Urteaga, M. ; Pierson, R. ; Rowell, P. ; Brar, B.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

620

Abstract

Well-balanced InP HBTs now have ∼450 GHz cutoff frequencies and ∼4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) and 175 GHz amplifiers have been demonstrated. We discuss device requirements (scaling laws and scaling limits) for realizing transistors and both digital and analog/RF circuits at sub-mm-wave frequencies; the most critical limitations are metal/semiconductor contact resistivities and dissipated power densities. Given present contact performance and thermal design, 200 GHz digital technologies and 300 GHz power amplifiers are now feasible and will soon be realized.

Keywords

III-V semiconductors; MMIC; analogue integrated circuits; bipolar digital integrated circuits; heterojunction bipolar transistors; indium compounds; millimetre wave integrated circuits; millimetre wave power amplifiers; submillimetre wave integrated circuits; 140 to 220 GHz; HBT digital IC; InP; MMIC circuit; RF circuits; analog circuits; digital circuits; dissipated power density; metal-semiconductor contact resistivity; power amplifiers; static dividers; sub-mm-wave frequency; thermal design; Conductivity; Cutoff frequency; Digital circuits; Electric breakdown; Heterojunction bipolar transistors; Indium phosphide; MMICs; Power amplifiers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572694

Filename

1572694