DocumentCode
2973870
Title
Streak-mode optical sensor in standard BiCMOS technology
Author
Zlatanski, Martin ; Uhring, Wilfried
Author_Institution
Corp. Res., ABB Switzerland Ltd., Baden-Dättwil, Switzerland
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
1604
Lastpage
1607
Abstract
A streak-mode optical sensor suitable for the accurate observation of nanosecond luminous phenomena is presented. The imager is fabricated in a standard 0.35 μm SiGe BiCMOS technology. It reaches a total acquisition rate of 512 GS/s and a temporal resolution of 490 ps at λ = 400 nm. The sensor has been successfully employed to acquire the fluorescence profile of a stilbene sample, demonstrating its capability to record nanosecond-order transients with high temporal resolution.
Keywords
BiCMOS integrated circuits; CMOS image sensors; Ge-Si alloys; optical sensors; SiGe; bit rate 512 Gbit/s; nanosecond luminous phenomena; nanosecond-order transients; size 0.35 mum; standard BiCMOS technology; streak-mode optical sensor; wavelength 400 nm; Bandwidth; Cameras; Computer architecture; Delay; Fluorescence; Optical imaging; Optical sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6127362
Filename
6127362
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