Title :
Streak-mode optical sensor in standard BiCMOS technology
Author :
Zlatanski, Martin ; Uhring, Wilfried
Author_Institution :
Corp. Res., ABB Switzerland Ltd., Baden-Dättwil, Switzerland
Abstract :
A streak-mode optical sensor suitable for the accurate observation of nanosecond luminous phenomena is presented. The imager is fabricated in a standard 0.35 μm SiGe BiCMOS technology. It reaches a total acquisition rate of 512 GS/s and a temporal resolution of 490 ps at λ = 400 nm. The sensor has been successfully employed to acquire the fluorescence profile of a stilbene sample, demonstrating its capability to record nanosecond-order transients with high temporal resolution.
Keywords :
BiCMOS integrated circuits; CMOS image sensors; Ge-Si alloys; optical sensors; SiGe; bit rate 512 Gbit/s; nanosecond luminous phenomena; nanosecond-order transients; size 0.35 mum; standard BiCMOS technology; streak-mode optical sensor; wavelength 400 nm; Bandwidth; Cameras; Computer architecture; Delay; Fluorescence; Optical imaging; Optical sensors;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6127362
