Title :
Researches and applications of monolithic millimeter-wave integrated circuits at National Taiwan University
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The recent research efforts of monolithic millimeter-wave integrated circuits at National Taiwan University are presented in this paper. The scope of our researches includes III-V compound based HEMT and HBT MMICs, as well as the silicon-based (CMOS and SiGe BiCMOS) RF/MMICs. State-of-the-art results have been achieved and some of the applications are also addressed.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; HEMT integrated circuits; III-V semiconductors; bipolar MMIC; elemental semiconductors; millimetre wave integrated circuits; BiCMOS technology; CMOS technology; HBT MMIC circuit; HEMT MMIC circuit; III-V compounds; National Taiwan University; SiGe; monolithic millimeter-wave integrated circuits; silicon-based MMIC; silicon-based RF IC; Broadband amplifiers; Distributed amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Millimeter wave integrated circuits; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Switches;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572695
