Title :
The study of the influence of the layer resistivity of thin epitaxial Si cells
Author :
Evrard, O. ; Vermeulen, T. ; Poortmans, J. ; Caymax, M. ; Laermans, P. ; Nijs, J. ; Mertens, R.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Epitaxial layers on heavily doped CZ substrates were grown in an APCVD epitaxial system with different epitaxial layer resistivities: 0.2, 0.5, 1.0 and 2.5 ohm.cm, in order to investigate the influence of the resistivity on the solar cell characteristics. Textured and untextured layers were compared. I-V characteristics under normalised AM 1.5 illumination, dark I-V and spectral response were measured. The efficiencies and the photogenerated current were found to increase with increasing layer resistivities in the range of their investigations
Keywords :
CVD coatings; chemical vapour deposition; crystal growth from melt; electrical resistivity; elemental semiconductors; liquid phase epitaxial growth; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 0.2 ohmcm; 0.5 ohmcm; 1 ohmcm; 13.3 percent; 14.5 percent; 14.9 percent; 2.5 ohmcm; APCVD epitaxial system; I-V characteristics; Si; dark current; heavily doped CZ substrates; layer resistivities; photogenerated current; semiconductor; solar cell characteristics; spectral response; textured layers; thin epitaxial solar cells; untextured layers; Conductivity; Dark current; Diodes; Doping; Epitaxial growth; Epitaxial layers; Etching; Lighting; Photovoltaic cells; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520514
