Title :
Advances on 32nm NiPt Salicide process
Author :
Chen, Yi-Wei ; Ho, Nien-Ting ; Lai, Jerander ; Tsai, T.C. ; Huang, C.C. ; Wu, J.Y. ; Ng, Ben ; Mayur, A.J. ; Tang, Alex ; Muthukrishnan, Shankar ; Zelenko, Jeremy ; Yang, Helen
Author_Institution :
United Microelectron. Corp., Tainan, Taiwan
fDate :
Sept. 29 2009-Oct. 2 2009
Abstract :
The two steps RTP program for 32 nm NiPt silicide formation process has been evaluated to improve source-drain resistance (Rsd), resistance uniformity and device leakage reduction behavior. A lower RTP-1 process has been investigated over the Nickel rich silicide phase formation and physical defect reduction. A higher millisecond anneal (MSA) RTP-2 has been investigated of its process window on Nickel monosilicide formation without Nickel silicide agglomeration and additional nickel piping. Then the optimized RTP program which combines a lower RTP-1 and higher RTP-2 by MSA has been demonstrated effective reduction of Nickel piping by e-beam inspection count, improved source to drain resistance (Rsd) and CMOS drive current (Ion/Ioff) improvement 4% on NMOSFET and 3% on PMOSFET, respectively.
Keywords :
CMOS integrated circuits; MOSFET; nickel alloys; ohmic contacts; platinum alloys; rapid thermal annealing; NMOSFET; NiPt; NiSi; PMOSFET; RTP-1 process; device leakage reduction behavior; e-beam inspection count; millisecond anneal RTP-2; nickel monosilicide formation; nickel piping; nickel rich silicide phase formation; nickel silicide agglomeration; optimized RTP program; physical defect reduction; process window; resistance uniformity; salicide process; silicide formation process; size 32 nm; source-drain resistance; CMOS process; Contact resistance; Electrical resistance measurement; MOSFET circuits; Microelectronics; Nickel; Rapid thermal annealing; Silicidation; Silicides; Temperature distribution;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on
Conference_Location :
Albany, NY
Print_ISBN :
978-1-4244-3814-3
Electronic_ISBN :
1944-0251
DOI :
10.1109/RTP.2009.5373433
