Title :
Application and advantages of larger Boron cluster ions for 22nm and beyond technology nodes
Author :
Sekar, Karuppanan ; Krull, Wade ; Chan, Jason ; McCoy, Steve ; Gelpey, Jeff
Author_Institution :
SemEquip, North Billerica, MA, USA
fDate :
Sept. 29 2009-Oct. 2 2009
Abstract :
Cluster ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 22 nm node and beyond. We present here the advantages of cluster ions with their special property of creating self-amorphous layer even at a lower dose. Here we show XTEM, SIMS and sheet resistance (Rs) measurements to elucidate the advantages of heavier cluster ion species like B36, B18 and C16. Using millisecond anneal technologies we show here that one can meet ultra-shallow junction depth (Xj) requirements as well as very low sheet resistance values.
Keywords :
annealing; boron; ion implantation; metal clusters; semiconductor devices; transmission electron microscopy; B; SIMS; XTEM; boron cluster ions; cluster ion implantation; millisecond anneal technology; self-amorphous layer; semiconductor devices; sheet resistance; ultra shallow junction depth; Amorphous materials; Annealing; Boron; Counting circuits; Fabrication; Implants; Ion implantation; Semiconductor devices; Space charge; Throughput;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on
Conference_Location :
Albany, NY
Print_ISBN :
978-1-4244-3814-3
Electronic_ISBN :
1944-0251
DOI :
10.1109/RTP.2009.5373434