Variable frequency microwave induced low temperature dopant activation in ion implanted silicon

Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550°C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900°C 30 sec rapid thermal anneal.