Application of laser annealing in the EU FP6 project D-DotFET

Author

Nanver, L.K. ; Jovanoviç, V. ; Biasotto, C. ; van der Cingel, J. ; Milosavljeviç, S.

Author_Institution

ECTM-DIMES, Delft Univ. of Technol., Delft, Netherlands

fYear

2009

fDate

Sept. 29 2009-Oct. 2 2009

Firstpage

1

Lastpage

7

Abstract

Full-melt high-power excimer laser annealing is investigated as a means of activating implanted source/drain regions in a MISFET structure, which could be positioned on a SiGe dot in such a manner that strain is transferred to the channel region. Such a Â¿DotFETÂ¿ device is the focus of the EU FP6 project D-DotFET. A MISFET structure fabricated at suitably low processing temperatures, below 400Â°C, is demonstrated with a metal/high-k gate-stack that is self-aligned to laser-annealed S/D regions.

Keywords

Ge-Si alloys; MISFET; excimer lasers; field effect transistors; laser beam annealing; semiconductor quantum dots; DotFET device; EU FP6 project D-DotFET; MISFET structure; SiGe; SiGe dot; channel region; full-melt high-power excimer laser annealing; implanted source/drain regions; metal/high-k gate-stack; Annealing; CMOS process; CMOS technology; Capacitive sensors; FETs; Germanium silicon alloys; Laser applications; MOSFETs; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on

Conference_Location

Albany, NY

ISSN

1944-0251

Print_ISBN

978-1-4244-3814-3

Electronic_ISBN

1944-0251

Type

conf

DOI

10.1109/RTP.2009.5373443

Filename

5373443