DocumentCode
2974658
Title
Accurate micro Hall Effect measurements on scribe line pads
Author
Osterberg, F.W. ; Petersen, D.H. ; Wang, F. ; Rosseel, E. ; Vandervorst, W. ; Hansen, O.
Author_Institution
Dept. of Micro & Nanotechnol., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2009
fDate
Sept. 29 2009-Oct. 2 2009
Firstpage
1
Lastpage
6
Abstract
Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 à 430 ¿m2, and the probe pitches range from 20 ¿m to 50 ¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method.
Keywords
Hall mobility; Monte Carlo methods; carrier density; elemental semiconductors; isolation technology; silicon; Hall mobility; Monte Carlo method; Si; microHall effect measurements; microfour-point measurements; patterned silicon wafers; rectangular pad; scribe line pads; semiconductor production; shallow trench isolation; sheet carrier density; Charge carrier density; Current measurement; Electrical resistance measurement; Hall effect; Insulation; Magnetic field measurement; Performance evaluation; Probes; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on
Conference_Location
Albany, NY
ISSN
1944-0251
Print_ISBN
978-1-4244-3814-3
Electronic_ISBN
1944-0251
Type
conf
DOI
10.1109/RTP.2009.5373450
Filename
5373450
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