Study of sub-melt laser damage annealing using Therma-Probe

Author

Rosseel, Erik ; Bogdanowicz, Janusz ; Clarysse, Trudo ; Vandervorst, Wilfried ; Salnik, Alex ; Han, Sang-Hyun ; Nicolaides, Lena

Author_Institution

IMEC, Leuven, Belgium

fYear

2009

fDate

Sept. 29 2009-Oct. 2 2009

Firstpage

1

Lastpage

4

Abstract

In the present work we report on Therma-Probe (TP) measurements to quantify the residual lattice damage after sub-melt laser annealing for different Ge pre-amorphization implant (PAI) conditions. The calibration of the TP signal, the influence of different laser parameters and the relation to junction leakage is discussed.

Keywords

Monte Carlo methods; amorphisation; calibration; crystal defects; dissolving; elemental semiconductors; germanium; ion implantation; laser beam annealing; laser beam effects; optical modulation; photoreflectance; reflectometry; Jk:Ge; Monte-Carlo simulations; calibration; defect dissolution degree; equivalent total defect densities; junction leakage; laser parameters; photo-modulated optical reflectance measurement; pre-amorphization implant conditions; residual defects; residual lattice damage; sub-melt laser annealing; therma-probe measurements; therma-wave measurement; Annealing; Implants; Interference; Laser beams; Laser excitation; Laser tuning; Lattices; Optical pumping; Plasma temperature; Reflectivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on

Conference_Location

Albany, NY

ISSN

1944-0251

Print_ISBN

978-1-4244-3814-3

Electronic_ISBN

1944-0251

Type

conf

DOI

10.1109/RTP.2009.5373464

Filename

5373464