DocumentCode :
2974957
Title :
High performance porous silicon solar cell development
Author :
Vernon, S.M. ; Kalkhoran, N.M. ; Maruska, H.P. ; Halverson, W.D.
Author_Institution :
Spire Corp., Bedford, MA, USA
Volume :
2
fYear :
1994
fDate :
5-9 Dec 1994
Firstpage :
1583
Abstract :
We have fabricated Si solar cells from porous Si/bulk Si structures. Two cell types, having the junction within the porous Si or within the bulk Si, were studied. We have seen clear evidence of the photovoltaic effect in porous Si, although currents and voltages are low, due to spreading resistance problems. On a non-AR-coated bulk Si p-n junction solar cell, formation of a porous Si surface layer increases both internal- and external quantum efficiency (QE) by functioning both as a light-trapping antireflection coating and an effective minority-carrier mirror. Current-voltage (I-V) data indicate that the porous Si layer does not lead to an increase in dark current
Keywords :
elemental semiconductors; minority carriers; p-n junctions; photovoltaic effects; porous materials; semiconductor materials; silicon; solar cells; Si; Si solar cells; current-voltage data; external quantum efficiency; high performance; internal quantum efficiency; light-trapping antireflection coating; minority-carrier mirror; non-AR-coated bulk Si p-n junction solar cell; photovoltaic effect; porous Si/bulk Si structures; porous silicon solar cell development; spreading resistance problems; Carrier confinement; Light emitting diodes; Photonic band gap; Photovoltaic cells; Photovoltaic effects; Photovoltaic systems; Potential well; Silicon; Solar power generation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.520518
Filename :
520518
Link To Document :
بازگشت