Title :
Activation of ion implanted Si for backside processing by ultra-fast laser thermal annealing: Energy homogeneity and micro-scale sheet resistance
Author :
Huet, K. ; Lin, R. ; Boniface, C. ; Desse, F. ; Petersen, D.H. ; Hansen, O. ; Variam, N. ; Magna, A. La ; Schuhmacher, M. ; Jensen, A. ; Nielsen, P.F. ; Besaucele, H. ; Venturing, J.
fDate :
Sept. 29 2009-Oct. 2 2009
Abstract :
In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.
Keywords :
boron; diffusion; elemental semiconductors; ion implantation; laser beam annealing; semiconductor doping; silicon; Si; Si:B; backside processing; diffusivity; energy homogeneity; full-die exposure optics; ion implanted silicon; microscale sheet resistance; overlap parameter optimization; shallow box-shaped profiles; shot activation uniformity; ultra-fast laser thermal annealing; Implants; Laser transitions; Permission; Photodiodes; Semiconductor lasers; Simulated annealing; Solid lasers; Substrates; Surface emitting lasers; Thermal resistance;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on
Conference_Location :
Albany, NY
Print_ISBN :
978-1-4244-3814-3
Electronic_ISBN :
1944-0251
DOI :
10.1109/RTP.2009.5373465