DocumentCode :
2975001
Title :
Sensing mechanism in receptor-modified organic field effect transistor based vapor sensors
Author :
Duarte, Davianne ; Dodabalapur, Ananth ; Holliday, Bradley J.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear :
2011
fDate :
28-31 Oct. 2011
Firstpage :
1929
Lastpage :
1932
Abstract :
In this paper we report on the sensing mechanism in organic field effect transistor based vapor sensors modified with solution deposited receptor molecules. The incorporation of the receptor molecule increases the partition coefficient and/or the ability of the analyte to produce a significant shift in the device properties such as mobility and threshold voltage through dipole interactions. The exposure of the receptor to certain analytes produces a large increase in the dipole moment which leads to an increase in the interaction energy and an increase in trapping effects.
Keywords :
gas sensors; organic field effect transistors; dipole interactions; dipole moment; receptor molecule; receptor-modified organic field effect transistor based vapor sensors; sensing mechanism; solution deposited receptor molecules; trapping effects; Charge carrier processes; Ethanol; Grain boundaries; Nitrogen; OFETs; Sensors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
ISSN :
1930-0395
Print_ISBN :
978-1-4244-9290-9
Type :
conf
DOI :
10.1109/ICSENS.2011.6127415
Filename :
6127415
Link To Document :
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