A 53.4-µW CMOS temperature sensor with an inaccuracy of ±1.9°C (3σ) from −65°C to 165°C

Author

Lee, Mitchell Sheng-Cheng ; Chen, Teng-Cheng ; Liou, Chia-Yi ; Chiueh, Herming

Author_Institution

Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

28-31 Oct. 2011

Firstpage

874

Lastpage

877

Abstract

A 53.4-μW CMOS temperature sensor with a 3σ inaccuracy of ±1.9°C from -65°C to 165°C is designed and implemented in TSMC 0.18um CMOS technology. The proposed temperature sensor includes a pure-CMOS PTAT circuitry, a pre-amplifier and a low-power Sigma-Delta ADC. The proposed PATA circuit utilized temperature compensation technology to enhance the linearity. This circuit has widest temperature range compare to other designs, which is suitable to be utilized to electronic devices in extreme temperature condition.

Keywords

CMOS integrated circuits; analogue-digital conversion; detector circuits; preamplifiers; temperature sensors; CMOS temperature sensor; TSMC CMOS technology; extreme temperature condition; low power sigma-delta analog-digital converters; power 53.4 muW; preamplifier; proposed to absolute temperature circuitry; pure CMOS PTAT circuit; size 0.18 mum; temperature -65 C to 165 C; CMOS integrated circuits; CMOS technology; Digital filters; Temperature distribution; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2011 IEEE

Conference_Location

Limerick

ISSN

1930-0395

Print_ISBN

978-1-4244-9290-9

Type

conf

DOI

10.1109/ICSENS.2011.6127416

Filename

6127416