Broadband GaInP/GaAs HBT Regenerative Frequency Divider with Active Loads

Author

Wei, Hung-Ju ; Meng, Chinchun ; Chang, YuWen ; Huang, Guo-Wei

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

fYear

2007

fDate

3-8 June 2007

Firstpage

2181

Lastpage

2184

Abstract

An integrated GalnP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz -26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The f_max/f_min ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V. The chip size is 1.0 times 1.0 mm².

Keywords

broadband networks; frequency dividers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave frequency convertors; microwave mixers; active loads; broadband HBT regenerative frequency divider; core power consumption; double-balanced mixer; frequency 4 GHz to 26 GHz; integrated heterojunction bipolar transistor; power 36.7 mW; resistive loads; voltage 5 V; Bandwidth; Circuits; Energy consumption; Frequency conversion; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Low pass filters; Mixers; Voltage; Active load; Double-Balanced Mixer; GaInP/GaAs HBT; RFD; Regenerative Frequency Divider; Resistive load;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380358

Filename

4264304