DocumentCode
2975608
Title
Structure transformation of ZnO thin films properties influenced by substrate temperature deposited by magnetron sputtering
Author
Sin, N. D Md ; Ahmad, S. ; Musa, M.Z. ; Mamat, M.H. ; Rusop, M.
Author_Institution
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
fYear
2012
fDate
24-27 June 2012
Firstpage
861
Lastpage
865
Abstract
The structure transformation of ZnO thin films properties influenced by substrate temperature deposited by RF Magnetron Sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation substrate temperature at 200°C~500°C on the ZnO thin films have been investigated. The thin films were examined using two point probe current-voltage (I-V) measurement (Keithley 2400), UV-Vis-NIR spectrophotometer, field emmision scanning electron microscopy (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). ZnO thin films were prepared at 200 watt by a RF magnetron sputtering using ZnO target using glass as the substrate. The IV measurement indicated as the substrate temperature increase, the conductivity of ZnO thin film increase. All films have show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about (<;8nm) was measured using AFM. The image form FESEM observed that transformation of structure started to change at high temperature (400~500°C).
Keywords
II-VI semiconductors; atomic force microscopy; electrical conductivity; field emission electron microscopy; infrared spectra; scanning electron microscopy; semiconductor growth; semiconductor thin films; solid-state phase transformations; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; AFM; FESEM; IV measurement; JEOL JSM 7600F; RF magnetron sputtering; UV-Vis-NIR spectra; ZnO; atomic force microscopy; electrical conductivity; electrical properties; field emmision scanning electron microscopy; optical properties; park system XE-100; power 200 W; root mean square roughness; structural properties; structure transformation; substrate temperature; temperature 200 degC to 500 degC; thin film properties; two point probe current-voltage measurement; Conductivity; Magnetic films; Optical films; Substrates; Temperature; Temperature measurement; Zinc oxide; ZnO thin films; electrical properties; optical properties; structural properties; substrate temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-1311-7
Type
conf
DOI
10.1109/SHUSER.2012.6269002
Filename
6269002
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