DocumentCode :
297583
Title :
Design and manufacture of a 2K transistor p-well CMOS gate array in a student run factory at RIT
Author :
Fuller, L.F. ; Kraaijenvanger, C.
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
fYear :
1995
fDate :
16-18 Mar 1995
Firstpage :
238
Lastpage :
241
Abstract :
A 2000 transistor p-well CMOS gate array has been designed for use as a teaching tool in the microelectronic engineering program at RIT. Students in microelectronic engineering study integrated circuit design and integrated circuit manufacturing starting in the first year of the five year program. The gate array is manufactured up to level 8 of the 11 level process by students in 5th year manufacturing classes. Levels 8 through 11 include contact cut, metal-one, via and metal-two. These levels are where the gate array is customized. The first year students design simple digital circuits, learn about schematic capture, simulation, bread boarding and layout. They also complete the wafer fabrication as part of their laboratory experience. Students in more advanced courses design more complex analog and digital circuits to be realized using the 2000 transistor gate array. The gate array project has provided an interesting educational experience in design, layout and manufacturing for students from freshmen year to graduate level. The devices function, turn around time is about one week for the last 4 levels of the process
Keywords :
CMOS logic circuits; educational aids; electronic engineering education; integrated circuit design; integrated circuit manufacture; logic arrays; logic design; integrated circuit design; integrated circuit manufacturing; microelectronic engineering program; p-well CMOS gate array; student run factory; teaching tool; wafer fabrication; Circuit simulation; Design engineering; Digital circuits; Education; Fabrication; Integrated circuit manufacture; Integrated circuit synthesis; Laboratories; Manufacturing processes; Microelectronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI, 1995. Proceedings., Fifth Great Lakes Symposium on
Conference_Location :
Buffalo, NY
ISSN :
1066-1395
Print_ISBN :
0-8186-7035-5
Type :
conf
DOI :
10.1109/GLSV.1995.516059
Filename :
516059
Link To Document :
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