DocumentCode
2976418
Title
Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs
Author
Silvestre, S. ; Puigdollers, J. ; Boronat, A. ; Castaner, L.
Author_Institution
Dept. D´´Eng. Electron., Micro & Nano Technol. Group, Barcelona
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
5
Lastpage
7
Abstract
Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first results concerning the optical and structural properties of the different deposited thin films.
Keywords
III-V semiconductors; gallium arsenide; semiconductor thin films; semiconductor-metal boundaries; silicon; sputtering; substrates; titanium; GaAs-Ti; GaAs-Ti-Si; intermediate band photovoltaic materials; optical properties; sputtering; structural properties; substrates; thin films; Gallium arsenide; Mechanical systems; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800415
Filename
4800415
Link To Document