Title :
Atomistic simulations of the effect of implant parameters on Si damage
Author :
López, Pedro ; Pelaz, Lourdes ; Marqués, Luis Alberto ; Aboy, María ; Santos, Iván
Author_Institution :
Dipt. de Electr. y Electron., Univ. de Valladolid, Valladolid
Abstract :
Device performance can be degraded by residual damage present after the processes of amorphization by ion implantation and the subsequent recrystallization. Atomistic simulations are used to analyze the effect of implant parameters, such as dose, dose rate and wafer temperature, on the amorphous layer depth and the amount of residual damage. The impact of the different beam pulse distributions of a single-wafer and a multi-wafer (batch) implanter on residual damage is also studied.
Keywords :
amorphisation; ion implantation; recrystallisation; silicon; amorphization; atomistic simulations; beam pulse distributions; implant parameters effect; ion implantation; multi-wafer implanter; recrystallization; residual damage; single-wafer implanter; Amorphous materials; Annealing; Atomic layer deposition; Electron devices; Implants; Ion implantation; Kinetic theory; Lattices; Telecommunications; Temperature;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800417
