Atomistic simulations of the effect of implant parameters on Si damage

Author

López, Pedro ; Pelaz, Lourdes ; Marqués, Luis Alberto ; Aboy, María ; Santos, Iván

Author_Institution

Dipt. de Electr. y Electron., Univ. de Valladolid, Valladolid

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

12

Lastpage

15

Abstract

Device performance can be degraded by residual damage present after the processes of amorphization by ion implantation and the subsequent recrystallization. Atomistic simulations are used to analyze the effect of implant parameters, such as dose, dose rate and wafer temperature, on the amorphous layer depth and the amount of residual damage. The impact of the different beam pulse distributions of a single-wafer and a multi-wafer (batch) implanter on residual damage is also studied.

Keywords

amorphisation; ion implantation; recrystallisation; silicon; amorphization; atomistic simulations; beam pulse distributions; implant parameters effect; ion implantation; multi-wafer implanter; recrystallization; residual damage; single-wafer implanter; Amorphous materials; Annealing; Atomic layer deposition; Electron devices; Implants; Ion implantation; Kinetic theory; Lattices; Telecommunications; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800417

Filename

4800417